Meyer-Neldel rule in charge-trapping metastability in p-type hydrogenated amorphous silicon

Measurements of capacitance transients due to charge-carrier emission from metastable defects in p-type hydrogenated amorphous silicon (a-Si:H) $p/n$ junction structures show that both holes and electrons can be metastably trapped in the p layer. At 350 K electrons and holes are emitted at the same rate, thereby defining the isokinetic temperature ${(T}_{\mathrm{iso}})$ for the Meyer-Neldel rule. The enthalpy changes for hole and electron emission are 0.94 and 0.51 eV, respectively. Charge emission rates are measured above and below ${T}_{\mathrm{iso}}.$ The entropy changes for hole and electron emission are 31 and 17 Boltzmann constants, respectively. Below ${T}_{\mathrm{iso}}$ electrons are emitted faster than holes, and above ${T}_{\mathrm{iso}}$ the reverse is true. These relative changes in emission rates are a direct consequence of the large entropy changes in the defect reactions. ${T}_{\mathrm{iso}}$ within experimental error, is the same as the H glass equilibration temperature (360 K) measured by others in p-type a-Si:H. Arguments are presented suggesting that the defect reactions measured here are involved in H glass equilibration.

[1]  R. Crandall.  Charge-trapping metastability in doped hydrogenated amorphous silicon , 2000 .

[2]  Crandall.  Metastable defects in hydrogenated amorphous silicon. , 1987, Physical review. B, Condensed matter.

[3]  Yelon,et al.  Microscopic explanation of the compensation (Meyer-Neldel) rule. , 1990, Physical review letters.

[4]  Jackson,et al.  Mechanisms of thermal equilibration in doped amorphous silicon. , 1988, Physical review. B, Condensed matter.

[5]  Jackson,et al.  Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.

[6]  Yelon,et al.  Origin and consequences of the compensation (Meyer-Neldel) law. , 1992, Physical review. B, Condensed matter.

[7]  H. Fritzsche,et al.  Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon , 1995 .

[8]  Halpern,et al.  Analysis of the dispersive diffusion of atoms in disordered solids. , 1991, Physical review letters.

[9]  Kakalios,et al.  Electronic transport in doped amorphous silicon. , 1986, Physical review. B, Condensed matter.

[10]  Kakalios,et al.  Thermal equilibration in doped amorphous silicon. , 1986, Physical review. B, Condensed matter.

[11]  Crandall.  Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. , 1991, Physical review. B, Condensed matter.

[12]  Finite size effects on the dynamics of amorphous and nanocrystalline materials , 1992 .

[13]  R. Tsu,et al.  Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon , 1987 .

[14]  Rasmussen,et al.  Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon. , 1992, Physical review letters.

[15]  D. V. Lang,et al.  Capacitance Transient Spectroscopy , 1977 .

[16]  Chuang‐Chuang Tsai,et al.  Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon , 1984 .

[17]  Xu,et al.  Observation of slow dangling-bond relaxation in p-type hydrogenated amorphous silicon. , 1995, Physical review. B, Condensed matter.

[18]  Stutzmann.  Thermally and optically induced metastabilities in doped hydrogenated amorphous silicon: ESR studies. , 1987, Physical review. B, Condensed matter.

[19]  Wu,et al.  Hydrogen dynamics in a-Si:H: Multiple trapping, structural relaxation, and the Meyer-Neldel relation. , 1991, Physical review. B, Condensed matter.

[20]  M. Carlen,et al.  Connection between dangling-bond relaxation and metastability in p-type hydrogenated amorphous silicon☆ , 1995 .

[21]  M. Saboungi,et al.  Meyer–Neldel rule for liquid semiconductors , 1995 .

[22]  D. Staebler,et al.  Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .

[23]  R. Keyes.  Volumes of Activation for Diffusion in Solids , 1958 .

[24]  H. Suhl,et al.  Compensation effect in thermally activated processes , 1982 .