Interface-trap building rates in wet and dry oxides
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Daniel M. Fleetwood | Marty R. Shaneyfelt | P. S. Winokur | J. R. Schwank | K. L. Hughes | G. L. Hash | D. Fleetwood | P. Winokur | J. Schwank | M. Shaneyfelt | M. P. Connors
[1] F. B. McLean. Generic impulse response function for MOS systems and its application to linear response analysis , 1988 .
[2] N. Saks,et al. Interface trap formation via the two-stage H/sup +/ process , 1989 .
[3] P. S. Winokur,et al. Two‐stage process for buildup of radiation‐induced interface states , 1979 .
[4] P. S. Winokur,et al. An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors , 1987, IEEE Transactions on Nuclear Science.
[5] Daniel M. Fleetwood,et al. Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices , 1991 .
[6] D. Fleetwood,et al. New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors) , 1992 .
[7] N. Saks,et al. Observation of H/sup +/ motion during interface trap formation , 1990 .
[8] P. S. Winokur,et al. Predicting CMOS Inverter Response in Nuclear and Space Environments , 1983, IEEE Transactions on Nuclear Science.
[9] P. S. Winokur,et al. Accounting for Dose-Enhancement Effects with CMOS Transistors , 1985, IEEE Transactions on Nuclear Science.
[10] Dennis B. Brown,et al. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field , 1991 .
[11] D. Fleetwood,et al. Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices , 1991 .
[12] R. E. Mikawa,et al. Generation of Paramagnetic Point Defects in Silicon Dioxide Films on Silicon Through Electron Injection and Exposure to Ionizing Radiation* , 1987 .
[13] Daniel M. Fleetwood,et al. Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices , 1990 .
[14] Daniel M. Fleetwood,et al. Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments , 1988 .
[15] F. B. McLean,et al. Simple approximate solutions to continuous-time-random-walk transport. Technical report. [Applied to charge transport in amorphous materials] , 1976 .
[16] Daniel M. Fleetwood,et al. Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices , 1990 .
[17] R. C. Hughes,et al. Hole Transport in MOS Oxides , 1975, IEEE Transactions on Nuclear Science.
[18] Patrick M. Lenahan,et al. Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .
[19] J. Boesch,et al. Time-dependent interface trap effects in MOS devices , 1988 .
[20] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[21] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[22] Daniel M. Fleetwood,et al. Theory and application of dual-transistor charge separation analysis , 1989 .
[23] H. Tango,et al. Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation , 1983, IEEE Transactions on Nuclear Science.
[24] F. B. McLean. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.
[25] P. S. Winokur,et al. Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process , 1985, IEEE Transactions on Nuclear Science.
[26] Daniel M. Fleetwood. Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices , 1989 .
[27] Dennis B. Brown,et al. Time dependence of interface trap formation in MOSFETs following pulsed irradiation , 1988 .
[28] H. E. Boesch,et al. Hole Transport and Recovery Characteristics of SiO2 Gate Insulators , 1976, IEEE Transactions on Nuclear Science.