Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 /spl mu/m-CMOS partially depleted SOI MOSFETs

ln this paper, the dqradath of 0.10 p-CMOS Partially Depteted (PD) SO1 MOSFETs subjected to 60 MeV proton irradiation for space applications assessment is analyzed. It is observed a radiation-induced increase of the leakage current in the subthreshold region of the NMOSFETs characteristics, which is more important in the case of mounted devices irradiated under bias. By studying the static and transient characteristics on devices with different geometries and bias conditions, the degradation is demonstrated to be originated by positive charge trapping in the buried oxide, inducing an edge parasitic back channel conduction. The effective density of trapped holes is estimated to be around 7.510" chargedcm' for the devices biased during the irradiation, whereas this is found to be about three times smaller in the case of the devices not biased during the irradiation. Under the studied experimental conditions, no significant changes are observed in the above threshold region of the N and PMOSFETs characteristics, making this technology suitable for space applications. Furthermore, the irradiation is not found to significantly change neither the magnitude nor the position of the Electron Valence Band gate tunneling-induced 211d peak of the transconductance, characteristic of these ultrathin gate oxide PD SO1 transistors. This is in agreement with the results obtained from non-irradiated devices measured at pclsitive back gate voItages, what is found to generate an irradiation-like parasitic back channel conduction. It is also derived that no significant changes in the majority carriers generation and recombination lifetimes are introduced by the irradiation, which is supported by the results coming from the measurements of front gate switch-off ID transients. Index Terms-Buried oxide, floating body effects, proton irradiation, radiation effects, silicon on insulator (SOI), switch off transient, total dose effects, transconductance peak.

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