Potential applications of nanoscale semiconductor quantum devices for information and telecommunications technologies

This paper presents the results of some of our studies on nanoscale semiconductor quantum structures that bear potential capabilities to bring forth new device concepts in future information and telecommunications technologies. Experimental and theoretical results include: quantum interference effects in AlGaAs/GaAs corrugated one-dimensional wires, room temperature electron tunneling through Ag nanoclusters on silicon, and single electron tunneling through a circular quantum dot array. We also have found several new ways of forming semiconductor nanostructures such as Si nano-pillars, GaAs quantum dots, and InGaAs V-grooved quantum wires. The results collectively suggest that nanoscale semiconductor quantum structures can be useful in advanced forms of information and telecommunications technologies.

[1]  H. Matsuhata,et al.  Fabrication of highly uniform AlGaAs/GaAs quantum wire superlattices by flow rate modulation epitaxy on V-grooved substrates , 1997 .

[2]  A. G. Milnes,et al.  Heterojunctions and Metal Semiconductor Junctions , 1972 .

[3]  Toshiaki Tamamura,et al.  Self-organized growth of strained InGaAs quantum disks , 1994, Nature.

[4]  M. Tabe,et al.  Nanometer‐scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation , 1996 .

[5]  Yasuhiko Arakawa,et al.  Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition , 1992 .

[6]  J. Schulman,et al.  Quantum wires with strain effect: Tight-binding analysis , 1992 .

[7]  E. Kapon,et al.  Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers , 1988 .

[8]  Hirofumi Matsuhata,et al.  Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate , 1995 .

[9]  E. Kapon,et al.  LOW-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION OF QUANTUM WIRES ON V-GROOVED SUBSTRATES , 1995 .

[10]  Seongjae Lee,et al.  Electrostatic conductance oscillations in an AlGaAsGaAs-based mesoscopic wire , 1995 .

[11]  J. Ha,et al.  Silicon nitride islands as oxidation masks for the formation of silicon nanopillars , 1999 .

[12]  Satoshi Takahashi,et al.  New selective molecular‐beam epitaxial growth method for direct formation of GaAs quantum dots , 1993 .

[13]  A. Madhukar,et al.  Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100) , 1990 .

[14]  Seongjae Lee,et al.  Electron diffraction due to a reflection grating in a conducting wire , 1997 .

[15]  GEOMETRICALLY INDUCED MULTIPLE COULOMB BLOCKADE GAPS , 1998, cond-mat/9806338.

[16]  T. Honda,et al.  Electron wave interference device with fractional layer superlattices , 1991 .

[17]  Sung-Bock Kim,et al.  Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V‐grooves with (322) Facet Sidewalls by Chemical Beam Epitaxy , 1998 .

[18]  J. Ha,et al.  Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface , 1999 .

[19]  J. Ha,et al.  ROOM TEMPERATURE OBSERVATION OF SINGLE ELECTRON TUNNELING EFFECT IN SELF-ASSEMBLED METAL QUANTUM DOTS ON A SEMICONDUCTOR SUBSTRATE , 1997 .

[20]  Hwang,et al.  Stimulated emission in semiconductor quantum wire heterostructures. , 1989, Physical review letters.

[21]  J. Oshinowo,et al.  In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition , 1995 .