Avalanche ruggedness of parallel SiC power MOSFETs

Abstract The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated power module. The tests were conducted on second generation 1200 V, 36 A–80 mΩ rated devices. Different temperature-dependent electrical parameters were identified and measured for a number of devices. The influence of spread in measured parameters was investigated experimentally during avalanche breakdown transient switching events and important findings have been highlighted.

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