Three dimensional magnetic abacus memory

Stacking nonvolatile memory cells into a three-dimensional matrix represents a powerful solution for the future of magnetic memory. However, it is technologically challenging to access the data in the storage medium if large numbers of bits are stacked on top of each other. Here we introduce a new type of multilevel, nonvolatile magnetic memory concept, the magnetic abacus. Instead of storing information in individual magnetic layers, thereby having to read out each magnetic layer separately, the magnetic abacus adopts a new encoding scheme. It is inspired by the idea of second quantisation, dealing with the memory state of the entire stack simultaneously. Direct read operations are implemented by measuring the artificially engineered ‘quantised' Hall voltage, each representing a count of the spin-up and spin-down layers in the stack. This new memory system further allows for both flexible scaling of the system and fast communication among cells. The magnetic abacus provides a promising approach for future nonvolatile 3D magnetic random access memory.

[1]  Shilei Zhang,et al.  NONVOLATILE FULL ADDER BASED ON A SINGLE MULTIVALUED HALL JUNCTION , 2013 .

[2]  S. Adenwalla,et al.  Oscillatory interlayer exchange coupling and its temperature dependence in [Pt/Co]3/NiO/[Co/Pt]3 multilayers with perpendicular anisotropy. , 2003, Physical review letters.

[3]  H. Ohno,et al.  Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature , 2008 .

[4]  David J. Lilja,et al.  Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture , 2010 .

[5]  L. J. Collins-McIntyre,et al.  Extraordinary hall balance , 2013, Scientific Reports.

[6]  J. Sinova,et al.  Anomalous hall effect , 2009, 0904.4154.

[7]  R. Cowburn,et al.  Three dimensional magnetic nanowires grown by focused electron-beam induced deposition , 2013, Scientific Reports.

[8]  J. Weiner,et al.  Fundamentals and applications , 2003 .

[9]  Rachid Sbiaa,et al.  Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy , 2011 .

[10]  R. Wiesendanger,et al.  Writing and Deleting Single Magnetic Skyrmions , 2013, Science.

[11]  G. Yu,et al.  Large enhancement of the anomalous Hall effect in Co/Pt multilayers sandwiched by MgO layers , 2010 .

[12]  Igor Žutić,et al.  New moves of the spintronics tango. , 2012, Nature materials.

[13]  W. Black,et al.  Programmable logic using giant-magnetoresistance and spin-dependent tunneling devices (invited) , 2000 .

[14]  K. H. Ploog,et al.  Programmable computing with a single magnetoresistive element , 2003, Nature.

[15]  Ji‐Hyun Lee,et al.  Magnetic ratchet for three-dimensional spintronic memory and logic , 2013, Nature.

[16]  S. Sarma,et al.  Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[17]  Guohan Hu,et al.  Magnetic dot arrays with multiple storage layers , 2005 .

[18]  D Petit,et al.  Magnetic Domain-Wall Logic , 2005, Science.

[19]  B. Diény,et al.  Multilevel magnetic nanodot arrays with out of plane anisotropy: the role of intra-dot magnetostatic coupling , 2007 .

[20]  S. Sikdar,et al.  Fundamentals and applications , 1998 .

[21]  V. A. L. Roy,et al.  Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism , 2013, Scientific Reports.

[22]  A. Fert,et al.  The emergence of spin electronics in data storage. , 2007, Nature materials.

[23]  S. Parkin,et al.  Magnetic Domain-Wall Racetrack Memory , 2008, Science.