论文信息 - A single flux quantum Josephson junction memory cell

A single flux quantum Josephson junction memory cell

Operation of a DRO single flux quantum Josephson junction memory cell is described. Writing and sensing is performed with coincident currents. The device acts as its own sense detector, switching to the gap voltage if a flux quantum was stored. Dense arrays not requiring standby power are potentially feasible.

Hans H. Zappe | H. Zappe

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