Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
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A. Bauer | A. Burenkov | V. Mortet | C. Strenger | F. Cristiano | E. Bedel-Pereira | J. Bobo | V. Uhnevionak
暂无分享，去创建一个
A. Bauer | A. Burenkov | V. Mortet | C. Strenger | F. Cristiano | E. Bedel-Pereira | J. Bobo | V. Uhnevionak