论文信息 - A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

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