GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers

GaSb-based infrared (IR) photodetector technology progression is toward larger-format focal plane arrays (FPAs). This requires a performance-based and cost-based manufacturing process on larger diameter substrates for improved throughput, volume, and yield. IQE has demonstrated molecular beam epitaxy (MBE) growth processes for barrier-design detectors (nBn) in multi-wafer configurations on 4-inch and 5-inch diameter GaSb substrates, and via a metamorphic process on 4-inch and 6-inch GaAs substrates. Recently we took the next step in this progression, growing nBn detectors on 6-inch Si substrates coated with CVD-grown Ge, opening the door for potential integration with Si-based electronic circuitry. Here, we compare the epiwafer characteristics (morphology, x-ray, PL) and diode performance (turn-on, QE, cutoff wavelength) of this M-nBn on Ge-Si with the same M-nBn on GaAs and the corresponding nBn structure grown on native GaSb substrate. Similar performance was obtained on all three types of substrates. We also present FPA data based on a 640×512 pixel, 15 μm pitch process without substrate removal, where QE ~ 80%, NE▵T < 20 mK, and operability <99% was demonstrated. The results represent an important technological path toward next-generation large-format IR detector array applications.