Liquid junctions for characterization of electronic materials. V. Comparison with solid‐state devices used to characterize reactive ion etching of Si

Impedance and modulation spectroscopy techniques were used to characterize the damage to Si promoted by reactive ion etching (RIE). We compare in this paper our previous results on liquid junction interfaces with Schottky barrier device configurations Ti/Si and Al/Si and metal‐oxide semiconductors Al/SiO2/Si. Important device parameters, such as the barrier height, obtained from the impedance data will be compared with current‐voltage measurements. The results cannot be explained only by considering the thermionic emission theory. For the CHF3/Ar and CF4 RIE treatments, the observed barrier lowering confirms our results with liquid junctions, supporting the existence of positive charges on the surface of the damaged Si. For the CClF3/H2 RIE treatment the results are consistent with the existence of a porous polymer layer on the semiconductor surface. In terms of sensitivity of the dielectric properties to the RIE treatment, the liquid junction is the most sensitive, followed by SB devices, with the MOS co...

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