Reliability of Schottky contacts on AlGaN.
暂无分享,去创建一个
Ingrid Moerman | Eva Monroy | Pierre Ruterana | Tomas Palacios | M. T. Montojo | Fernando Calle | F. Omnès | M. Verdú | Zahia Bougrioua | I. Moerman | T. Palacios | E. Monroy | F. Omnès | F. Calle | P. Ruterana | F. J. Sánchez | M. Verdú | M. Montojo | Z. Bougrioua | J Sanchez-Osorio | F. Sanchez | J. Sanchez-Osorio
[1] Umesh K. Mishra,et al. Very-high power density AlGaN/GaN HEMTs , 2001 .
[2] Günther Tränkle,et al. Reliability considerations of III-nitride microelectronic devices , 1999 .
[3] Bernard Beaumont,et al. METALORGANIC VAPOR-PHASE EPITAXY-GROWN ALGAN MATERIALS FOR VISIBLE-BLIND ULTRAVIOLET PHOTODETECTOR APPLICATIONS , 1999 .
[4] J. A. del Alamo,et al. An insulator-lined silicon substrate-via technology with high aspect ratio , 2001 .
[5] I. Moerman,et al. Material optimisation for AlGaN/GaN HFET applications , 2001 .
[6] Michael S. Shur,et al. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors , 2000 .
[7] E. Muñoz,et al. AlGaN metal–semiconductor–metal photodiodes , 1999 .
[8] R. Belser,et al. Alloying Behavior of Thin Bimetal Films, Simultaneously or Successively Deposited , 1960 .