Hexagonal boron nitride grown by MOVPE

Abstract Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and metalorganic vapor phase epitaxy. By introducing flow-rate modulation epitaxy (FME), which enables us to reduce parasitic reactions and lower the optimal growth temperature, we have succeeded in growing single-phase h-BN epitaxial films on nearly lattice-matched (1 1 1) Ni substrates. The h-BN epitaxial films exhibit near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence at room temperature. The combination of FME and the lattice-matched substrate paves the way for the epitaxial growth of high-quality h-BN.

[1]  H. M. Manasevit,et al.  The Use of Metalorganics in the Preparation of Semiconductor Materials VIII . Feasibility Studies of the Growth of Group III ‐Group V Compounds of Boron by MOCVD , 1989 .

[2]  T. Makimōto,et al.  Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy , 2007 .

[3]  Takashi Taniguchi,et al.  Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal , 2004, Nature materials.

[4]  H. Fujioka,et al.  Low-temperature activation of Mg-doped GaN using Ni films , 2001 .

[5]  Kenji Watanabe,et al.  Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure , 2007, Science.

[6]  M. Hansen,et al.  Constitution of Binary Alloys , 1958 .

[7]  J. E. Crombeen,et al.  LEED and Auger electron observations of the SiC(0001) surface , 1975 .

[8]  M. Rand,et al.  Preparation and Properties of Thin Film Boron Nitride , 1968 .

[9]  S. Motojima,et al.  Low temperature deposition of hexagonal BN films by chemical vapour deposition , 1982 .

[10]  S. Murarka,et al.  Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron Nitride , 1979 .

[11]  Walter A. Harrison,et al.  Electronic structure and the properties of solids , 1980 .

[12]  Shui-Tong Lee,et al.  Cubic boron nitride films for industrial applications , 2005 .

[13]  T. Makimōto,et al.  Flow-Rate Modulation Epitaxy of GaAs , 1985 .

[14]  N. Kobayashi,et al.  In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet light , 1998 .

[15]  S. Dolan,et al.  Preparation of Amorphous Boron Nitride and Its Conversion to a Turbostratic, Tubular Form , 1993, Science.

[16]  N. Weston,et al.  Turbostratic1 Boron Nitride, Thermal Transformation to Ordered-layer-lattice Boron Nitride , 1962 .

[17]  D. Stevenson,et al.  Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium Nitride , 1978 .

[18]  J.-M. Themlin,et al.  HETEROEPITAXIAL GRAPHITE ON 6H-SIC(0001): INTERFACE FORMATION THROUGH CONDUCTION-BAND ELECTRONIC STRUCTURE , 1998 .

[19]  Katsumitsu Nakamura.  Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition , 1986 .

[20]  T. Makimōto,et al.  Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow‐rate modulation epitaxy , 2007 .