Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching Device

Study on complementary resistive switching of TiN/HfOx/TiN memory device has shown that the device is highly susceptible to self-reset, i.e., the device is automatically programmed into the high-resistance state during forming. This is observed in the following opposite-polarity voltage sweep, in which the device exhibits a set behavior (instead of a reset as typically observed in bipolar switching mode). Interestingly, the self-reset behavior is: 1) suppressed in devices with a thin Al2O3 layer inserted in-between the TiN and HfOx and 2) completely eliminated in devices with the TiN cathode replaced by Pt. These results are consistent with a hypothesis that ascribes the self-reset to the migration of oxygen ions from the cathode interfacial oxide into the conducting filament in the HfOx during the forming transient, thus resulting in the disruption of the filament. With the reduction in voltage loading across the cathode interfacial oxide during forming transient in devices with the Al2O3 interlayer and the elimination of interfacial oxide in devices with the Pt cathode, the occurrence of self-reset is reduced or eradicated.

[1]  J. McPherson,et al.  Trends in the ultimate breakdown strength of high dielectric-constant materials , 2003 .

[2]  Peide D. Ye,et al.  Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs , 2005 .

[3]  K. Tsunoda,et al.  Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance , 2008 .

[4]  I. Pereyra,et al.  Study of TiOxNy MOS Capacitors , 2009 .

[5]  R. Agaiby,et al.  Detailed Correlation of Electrical and Breakdown Characteristics to the Structural Properties of ALD Grown HfO2- and ZrO2-based Capacitor Dielectrics , 2009 .

[6]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[7]  Matthew D. Pickett,et al.  The mechanism of electroforming of metal oxide memristive switches , 2009, Nanotechnology.

[8]  O. Richard,et al.  10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.

[9]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[10]  Sungjoo Lee,et al.  $\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior , 2012, IEEE Electron Device Letters.

[11]  Yuchao Yang,et al.  Complementary resistive switching in tantalum oxide-based resistive memory devices , 2012, 1204.3515.

[12]  Yibo Li,et al.  Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications , 2012, IEEE Electron Device Letters.

[13]  Takuo Ohkochi,et al.  Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe , 2013 .

[14]  C. Cagli,et al.  Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures , 2013, Nanotechnology.

[15]  Wei Lu,et al.  Oxide heterostructure resistive memory. , 2013, Nano letters.

[16]  D. Ielmini,et al.  Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory , 2013, IEEE Transactions on Electron Devices.

[17]  D Ielmini,et al.  Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament , 2013, Advanced materials.

[18]  Salvatore Lombardo,et al.  Microscopy study of the conductive filament in HfO2 resistive switching memory devices , 2013 .

[19]  S. Maikap,et al.  Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure , 2014, Nanoscale Research Letters.

[20]  Diing Shenp Ang,et al.  Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device , 2014 .

[21]  Shinhyun Choi,et al.  Comprehensive physical model of dynamic resistive switching in an oxide memristor. , 2014, ACS nano.

[22]  F. Chiu.  A Review on Conduction Mechanisms in Dielectric Films , 2014 .

[23]  Gennadi Bersuker,et al.  White-light-induced disruption of nanoscale conducting filament in hafnia , 2015 .