Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source
暂无分享，去创建一个
[1] Y. Makarov,et al. Bulk GaN growth by Gallium Vapor Transport technique , 2005 .
[2] M. Dudley,et al. SYNCHROTRON WHITE BEAM TOPOGRAPHY CHARACTERIZATION OF PHYSICAL VAPOR TRANSPORT GROWN ALN AND AMMONOTHERMAL GAN , 2002 .
[3] Masahiko Shimada,et al. GaN single crystal growth using high-purity Na as a flux , 2002 .
[4] Izabella Grzegory,et al. High pressure growth of bulk GaN from solutions in gallium , 2001 .
[5] M. Mehregany,et al. Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization , 2001 .
[6] Ning Wang,et al. Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition , 2000 .
[7] S. Porowski. Bulk and homoepitaxial GaN-growth and characterisation , 1998 .
[8] Noble M. Johnson,et al. Growth of gallium nitride by hydride vapor-phase epitaxy , 1997 .
[9] R. Dupuis. Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor deposition , 1997 .
[10] R. Davis. Thin films and devices of diamond, silicon carbide and gallium nitride , 1993 .
[11] X. R. Huang,et al. Epitaxial Layers, X-ray Characterization of , 2001 .
[12] M. Ilegems,et al. Localized Epitaxy of GaN by HVPE on patterned Substrates , 1998 .
[13] A. Roenkov,et al. High rate GaN epitaxial growth by sublimation sandwich method , 1998 .