论文信息 - Control of Grain Boundary Location By Selective Nucleation Over Amorphous Substrates

Control of Grain Boundary Location By Selective Nucleation Over Amorphous Substrates

A selective nucleation based crystal-growth-technique over amorphous substrates is originated. The method manipulates nucleation sites and periods and hence, controls the grain boundary location by modifing the substrate surface. In Si, small Si 3 N 4 nucleation sites are formed, 1–2 pm in diameter, 100 μm in period, over Sio 2 . One Si nucleus is formed exclusively in the small area of Si 3 N 4 by CVD. The highly faceted and periodically located nuclei grow over SiO 2 up to 100 μm in diameter before impingement. A MOS-FET fabricated inside the island operates comparably to the bulk Si control

[1] Henry I. Smith,et al. Graphoepitaxy of Ge on SiO2 by solid‐state surface‐energy‐driven grain growth , 1984 .

[2] Harry A. Atwater,et al. Silicon-on-insulator by graphoepitaxy and zone-melting recrystallization of patterned films , 1983 .

[3] T. Yonehara,et al. Competing processes of Si molecular beam reactive etching and simultaneous deposition on film and bulk SiO2 , 1982 .