Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

We report on the reduction of leakage current at half threshold bias (I<inf>off1/2</inf>) down to the 1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices demonstrated excellent thermal stability up to 600°C, as well as electrical stability (V<inf>th</inf>, I<inf>off1/2</inf>) when operated at a high on current density of 23MA/cm² for 10⁸ cycles.