Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios
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Yik-Khoon Ee | Nelson Tansu | Pisist Kumnorkaew | Xiao-Hang Li | J. Gilchrist | N. Tansu | P. Kumnorkaew | Renbo Song | James F Gilchrist | Renbo Song | Y. Ee | Xiao-Hang Li
[1] Seoung-Hwan Park,et al. Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency , 2009 .
[2] Hao-Chung Kuo,et al. Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface , 2005 .
[3] Ivan Moreno,et al. Modeling the radiation pattern of LEDs. , 2008, Optics express.
[4] A. A. Allerman,et al. Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence , 2002 .
[5] Umesh K. Mishra,et al. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap , 2008 .
[6] Jing Zhang,et al. Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents , 2011 .
[7] Rajendra Dahal,et al. Thermoelectric Properties of In0.3Ga0.7N Alloys , 2009 .
[8] Yik-Khoon Ee,et al. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. , 2009, Optics express.
[9] Mathew C. Schmidt,et al. Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes , 2007 .
[10] S. Denbaars,et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening , 2004 .
[11] Ian T. Ferguson,et al. Design and characterization of GaN∕InGaN solar cells , 2007 .
[12] Jing Zhang,et al. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition , 2010 .
[13] Ronald A. Arif,et al. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime , 2009 .
[14] Nelson Tansu,et al. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes , 2011 .
[15] Seong-Ju Park,et al. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface , 2003 .
[16] Yik-Khoon Ee,et al. Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. , 2008, Langmuir : the ACS journal of surfaces and colloids.
[17] M.H. Crawford,et al. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances , 2009, IEEE Journal of Selected Topics in Quantum Electronics.
[18] Hisashi Yamada,et al. Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes , 2007 .
[19] Hirofumi Kan,et al. Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode , 2010 .
[20] Nelson Tansu,et al. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography , 2011, Nanoscale research letters.
[21] Chia-Feng Lin,et al. Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall , 2005 .
[22] Yik-Khoon Ee,et al. Enhancement of Light Extraction Efficiency of InGaN Quantum Wells LEDs Using SiO2 Microspheres , 2007, 2007 Conference on Lasers and Electro-Optics (CLEO).
[23] Seoung-Hwan Park,et al. High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes , 2009 .
[24] Jonathan J. Wierer,et al. III -nitride photonic-crystal light-emitting diodes with high extraction efficiency , 2009 .
[25] Yujie J. Ding,et al. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells , 2011, IEEE Journal of Selected Topics in Quantum Electronics.
[26] Kent D. Choquette,et al. Enhancement in external quantum efficiency of blue light-emitting diode by photonic crystal surface grating , 2005 .
[27] E. Fred Schubert,et al. Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection , 2007 .
[28] Joonhee Lee,et al. Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs , 2007 .
[29] Michael R. Krames,et al. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 , 2007 .
[30] Michael Kneissl,et al. Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes , 2003 .
[31] J. Gilchrist,et al. Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses , 2009, IEEE Journal of Selected Topics in Quantum Electronics.
[32] J. Lin,et al. Thermoelectric Properties of In_x_Ga_1-x_N Alloys , 2008 .
[33] C. Zah,et al. Optical gain and gain saturation of blue‐green InGaN quantum wells , 2010 .
[34] T. Karabacak,et al. Low temperature melting of copper nanorod arrays , 2006 .
[35] Nelson Tansu,et al. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes , 2011 .
[36] Yik-Khoon Ee,et al. Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode , 2009, IEEE Journal of Selected Topics in Quantum Electronics.
[37] Yen-Kuang Kuo,et al. Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well , 2010 .
[38] J.-Q. Xi,et al. Enhanced Light Extraction in GaInN Light-Emitting Diode With Pyramid Reflector , 2006, IEEE Photonics Technology Letters.
[39] E. Schubert,et al. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop , 2008 .
[40] S. G. Bishop,et al. GaN epitaxial lateral overgrowth and optical characterization , 1998 .
[41] F. Mont,et al. Enhancement of Light Extraction in GaInN Light-Emitting Diodes with Graded-Index Indium Tin Oxide Layer , 2007, 2007 Conference on Lasers and Electro-Optics (CLEO).
[42] Taeil Jung,et al. Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency , 2009, IEEE Journal of Selected Topics in Quantum Electronics.
[43] James S. Speck,et al. Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes , 2011 .
[44] J. Gilchrist,et al. Effect of nanoparticle concentration on the convective deposition of binary suspensions. , 2009, Langmuir : the ACS journal of surfaces and colloids.
[45] Rajendra Dahal,et al. InGaN/GaN multiple quantum well solar cells with long operating wavelengths , 2009 .
[46] Q-Han Park,et al. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns , 2005 .
[47] Erdan Gu,et al. GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses , 2004 .
[48] S. G. Bishop,et al. The incorporation of arsenic in GaN by metalorganic chemical vapor deposition , 1998 .
[49] E. Fred Schubert,et al. Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN , 2011 .
[50] Ronald A. Arif,et al. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes , 2010, DRC 2010.
[51] Andreas Breidenassel,et al. 500 nm electrically driven InGaN based laser diodes , 2009 .