Effective line length of test structure and its effect of area scaling on TDDB characterization in advanced Cu/ULK process
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Jongwoo Park | Tae-Young Jeong | Miji Lee | Seung Man Choi | Dong Cheon Baek | S. Windu | Jongwoo Park | Dong-Cheon Baek | Miji Lee | T. Jeong | S. Choi | S. Windu
[1] M. Shinosky,et al. Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes , 2011, 2011 International Reliability Physics Symposium.
[2] Oliver Aubel,et al. New perspectives of dielectric breakdown in low-k interconnects , 2009, 2009 IEEE International Reliability Physics Symposium.
[3] Ernest Y. Wu,et al. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques , 2002 .
[4] Guido Groeseneken,et al. Study of leakage mechanism and trap density in porous low-k materials , 2010, 2010 IEEE International Reliability Physics Symposium.
[5] T. Sullivan,et al. A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[6] W.M. Hsu,et al. Identification and Layout Modification of Copper/Low k Interconnect Dielectric Reliability Assessment by using RVDB Test , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[7] Suzumura Naohito,et al. A NEW TDDB DEGRADATION MODEL BASED ON CU ION DRIFT IN CU INTERCONNECT DIELECTRICS , 2007 .
[8] Guido Groeseneken,et al. Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability , 2005, Microelectron. Reliab..