Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly(ethylene naphthalate) substrates with hybrid barrier layers
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Jong-Heon Yang | G. Kim | C. Hwang | JaeEun Pi | Oh‐Sang Kwon | Sung‐Min Yoon | Min-Ji Park | Da-Jeong Yun | M. Ryu | Chi-Sun Hwang