An Ultra-steep Slope Two-dimensional Strain Effect Transistor.

We introduce a high-performance and ultra-steep slope switch, referred to as strain effect transistor (SET), with a subthreshold swing < 0.68 mV/decade at room temperature for 7 orders of magnitude change in the source-to-drain current based on atomically thin 1T'-MoTe2 as the channel material, piezoelectric lead zirconate titanate (PZT) as the gate dielectric, and nickel (Ni) as the source/drain contact metal. We exploit gate-voltage induced strain transduction in PZT leading to abrupt and reversible cracking of the metal contacts to achieve the abrupt switching. The SET also exhibits a low OFF-state current < 1 pA/μm, a high ON-state current > 1.8 mA/μm at a supply voltage of 1 V, a large current ON/OFF ratio > 1 × 109, and a high transconductance of > 100 μS/μm. The switching delay for the SET was found to be < 5 μs, and no device failure was observed even after 1 million (1 × 106) switching cycles.

[1]  C. Hu,et al.  Enhanced ferroelectricity in ultrathin films grown directly on silicon , 2020, Nature.

[2]  K. Banerjee,et al.  Is negative capacitance FET a steep-slope logic switch? , 2020, Nature Communications.

[3]  Ming Liu,et al.  Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor , 2019, Nature Nanotechnology.

[4]  P. Ajayan,et al.  Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition. , 2019, ACS applied materials & interfaces.

[5]  Mengwei Si,et al.  A critical review of recent progress on negative capacitance field-effect transistors , 2019, Applied Physics Letters.

[6]  Gerhard Klimeck,et al.  Complementary Black Phosphorus Tunneling Field-Effect Transistors. , 2018, ACS nano.

[7]  Yilan Kang,et al.  Improvement of mechanical properties of graphene/substrate interface via regulation of initial strain through cyclic loading , 2018, Optics and Lasers in Engineering.

[8]  Arantxa Uranga,et al.  Fabrication and characterization of a hammer-shaped CMOS/BEOL-embedded nanoelectromechanical (NEM) relay , 2018 .

[9]  R. Ritchie,et al.  Electrically reversible cracks in an intermetallic film controlled by an electric field , 2018, Nature Communications.

[10]  S. Mantl,et al.  A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor , 2017, Scientific Reports.

[11]  Krishna Dayal Shukla,et al.  Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices , 2016, Scientific Reports.

[12]  P. Ajayan,et al.  A subthermionic tunnel field-effect transistor with an atomically thin channel , 2015, Nature.

[13]  Jie Xiang,et al.  Three-terminal nanoelectromechanical field effect transistor with abrupt subthreshold slope. , 2014, Nano letters.

[14]  Joerg Appenzeller,et al.  WSe2 field effect transistors with enhanced ambipolar characteristics , 2013 .

[15]  Lars Samuelson,et al.  Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires. , 2012, ACS nano.

[16]  Adrian M. Ionescu,et al.  Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.

[17]  Mats-Erik Pistol,et al.  InAs/GaSb heterostructure nanowires for tunnel field-effect transistors. , 2010, Nano letters.

[18]  M. Roukes,et al.  Low voltage nanoelectromechanical switches based on silicon carbide nanowires. , 2010, Nano letters.

[19]  S. Datta,et al.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[20]  Michael Sayer,et al.  Characterization of sputtered nichrome (Ni–Cr 80/20 wt.%) films for strain gauge applications , 2006 .

[21]  J. Meindl,et al.  Limits on silicon nanoelectronics for terascale integration. , 2001, Science.

[22]  Shekhar Y. Borkar,et al.  Design challenges of technology scaling , 1999, IEEE Micro.

[23]  F. Lotgering,et al.  Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—I , 1959 .