A 35.6dB, 43.3% PAE class E differential power amplifier in 2.4GHz with cross coupling neutralization for IoT applications

In this paper a novel class E power amplifier with high efficiency and low power consumption for internet of things (IOT) application is presented. It is shown that employing cross coupling neutralization and fully differential topology in class E power amplifier lead to high power efficiency, high power gain and better reverse isolation. The proposed class E amplifier can achieve 28.5 dBm output power to a 50Ω load at 2.4 GHz with 43.6% power added efficiency and 35.6 dB power gain. These results are verified by the circuit level simulations of the proposed PA that performed by 0.18μm standard CMOS technology.

[1]  A. J. Wilkinson,et al.  Transmission-line load-network topology for class-E power amplifiers , 2001 .

[2]  Changsik Yoo,et al.  A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-/spl mu/m CMOS , 2001 .

[3]  Marian K. Kazimierczuk,et al.  Exact analysis of class E tuned power amplifier at any Q and switch duty cycle , 1987 .

[4]  A. Mediano,et al.  High-Efficiency Broadband Parallel-Circuit Class E RF Power Amplifier With Reactance-Compensation Technique , 2008, IEEE Transactions on Microwave Theory and Techniques.

[5]  By Andrei Grebennikov Class E High-Efficiency Power Amplifiers : Historical Aspect and Future Prospect , 2002 .

[6]  A. Mediano,et al.  Design of Class E Amplifier With Nonlinear and Linear Shunt Capacitances for Any Duty Cycle , 2007, IEEE Transactions on Microwave Theory and Techniques.

[7]  Mahmoud Kamarei,et al.  Analysis and Optimum Design of a Class E RF Power Amplifier , 2008, IEEE Transactions on Circuits and Systems I: Regular Papers.

[8]  Bumman Kim,et al.  Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency , 2012, IEEE Transactions on Microwave Theory and Techniques.

[9]  Sungho Lee,et al.  A CMOS Class-E Power Amplifier With Voltage Stress Relief and Enhanced Efficiency , 2010, IEEE Transactions on Microwave Theory and Techniques.

[10]  D. Su,et al.  A 2.5-V, 1-W monolithic CMOS RF power amplifier , 1997, Proceedings of CICC 97 - Custom Integrated Circuits Conference.

[11]  S. I. Long,et al.  Design of Class E power amplifier with nonlinear parasitic output capacitance , 1999 .

[12]  W. L. Chan,et al.  A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[13]  Narendra Kumar A L Aridas High Efficiency Broadband Parallel-Circuit Class E RF Power Amplifier with Reactance Compensation Technique , 2008 .

[14]  A. Hajimiri,et al.  Design issues in CMOS differential LC oscillators , 1999, IEEE J. Solid State Circuits.

[15]  A.V. Grebennikov,et al.  Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[16]  Hiroo Sekiya,et al.  Analysis and Design of Class-E Power Amplifier With MOSFET Parasitic Linear and Nonlinear Capacitances at Any Duty Ratio , 2013, IEEE Transactions on Power Electronics.

[17]  Kumar Narendra,et al.  Optimised high-efficiency Class E radio frequency power amplifier for wide bandwidth and high harmonics suppression , 2014, IET Circuits Devices Syst..

[18]  Michiel Steyaert,et al.  A 700-MHz 1-W fully differential CMOS class-E power amplifier , 2002 .

[19]  T.H. Lee,et al.  A physical model for planar spiral inductors on silicon , 1996, International Electron Devices Meeting. Technical Digest.

[20]  Wenhua Chen,et al.  'New' solutions of Class-E power amplifier with finite dc feed inductor at any duty ratio , 2014, IET Circuits Devices Syst..

[21]  F. Svelto,et al.  A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications , 2008, IEEE Journal of Solid-State Circuits.

[22]  F. Svelto,et al.  Analysis of reliability and power efficiency in cascode class-E PAs , 2006, IEEE Journal of Solid-State Circuits.

[23]  Paul R. Gray,et al.  A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications , 1999 .

[24]  N. C. Voulgaris,et al.  A class E tuned amplifier configuration with finite DC-feed inductance and no capacitance in parallel with switch , 1988 .

[25]  Andrei Grebennikov Load Network Design Techniques for Class E RF and Microwave Amplifiers , 2004 .

[26]  Ying Zhang,et al.  A novel high frequency, high-efficiency, differential class-E power amplifier in 0.18μm CMOS , 2003, ISLPED '03.

[27]  C.-H. Li,et al.  Maximum frequency and optimum performance of class E power amplifiers , 1994 .

[28]  Kenichi Okada,et al.  A 60GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16 % PAE , 2011, 2011 6th European Microwave Integrated Circuit Conference.

[29]  David J. Allstot,et al.  A capacitor cross-coupled common-gate low-noise amplifier , 2005, IEEE Transactions on Circuits and Systems II: Express Briefs.

[30]  Alireza Saberkari,et al.  A novel 2.4 GHz CMOS class-E power amplifier with efficient power control for wireless communications , 2010, 2010 17th IEEE International Conference on Electronics, Circuits and Systems.

[31]  Peter M. Asbeck,et al.  28 GHz >250 mW CMOS Power Amplifier Using Multigate-Cell Design , 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[32]  Kazunaga Ikeda,et al.  Even harmonic resonant class E tuned power amplifier without RF choke , 1996 .

[33]  Luca Larcher,et al.  A 1.7-GHz 31dBm differential CMOS Class-E Power Amplifier with 58% PAE , 2007, 2007 IEEE Custom Integrated Circuits Conference.