Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry
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[1] S. Zou,et al. Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon , 1994 .
[2] T. Lohner,et al. Ion-implantation induced anomalous surface amorphization in silicon , 1994 .
[3] Matthew F. Chisholm,et al. Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry , 1993 .
[4] T. Lohner,et al. Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry , 1992 .
[5] T. Lohner,et al. Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by spectroscopic ellipsometry using different optical models , 1992 .
[6] H. Maes,et al. Spectroscopic ellipsometry for depth profiling of ion implanted materials , 1991 .
[7] P. McMarr,et al. Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces , 1986 .
[8] Jagdish Narayan,et al. Nondestructive depth profiling by spectroscopic ellipsometry , 1985 .
[9] T. Lohner,et al. Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry , 1984 .
[10] M. Erman,et al. Analysis of ion-implanted GaAs by spectroscopic ellipsometry , 1983 .
[11] T. Lohner,et al. Characterization of ion implanted silicon by ellipsometry and channeling , 1983 .
[12] T. Lohner,et al. Improved depth resolution of channeling measurements in Rutherford backscattering by a detector tilt , 1978 .