mcplotgl: graphics for the DAMOCLES program
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[1] David J. Frank,et al. Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling , 1993 .
[2] M. Fischetti. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport , 1991 .
[3] S. Laux,et al. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. , 1988, Physical review. B, Condensed matter.
[4] Massimo V. Fischetti,et al. Monte Carlo simulation of hot-carrier transport in real semiconductor devices , 1989 .
[5] S. Laux,et al. The DAMOCLES Monte Carlo Device Simulation Program , 1991 .
[6] S. Laux,et al. Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K , 1988, IEEE Electron Device Letters.
[7] David J. Frank,et al. Monte Carlo analysis of semiconductor devices: the DAMOCLES program , 1990 .
[8] S. Laux,et al. Numerical Aspects and Implementation of theDamoclesMonte Carlo Device Simulation Program , 1991 .
[9] Fischetti,et al. Monte Carlo study of electron transport in silicon inversion layers. , 1993, Physical review. B, Condensed matter.
[10] S. Laux,et al. The physics of hot-electron degradation of Si MOSFET's: Can we understand it? , 1989 .
[11] Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach , 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.