论文信息 - Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy - 字舞流文

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

V. Preobrazhenskii | M. D. Vilisova | M. Putyato | B. Semyagin | L. G. Lavrent’eva | I. V. Ivonin | I. A. Bobrovnikova | S. Subach | S. Toropov