论文信息 - A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

Integrated InGaP/GaAs HBT transimpedance amplifier (TZ) circuits were designed, fabricated and characterized. In this study, we propose using a capacitive-peaking (C-peaking) technique to increase the bandwidth of the transimpedance amplifier. Based on a Butterworth-type approach, we can easily enhance the bandwidth of the amplifier by this C-peaking technique without sacrificing its low-frequency TZ gain. The low-frequency transimpedance gain of our designed amplifier is 51.4 dB/spl Omega/, and the measured 3 dB bandwidth is enhanced from 9 GHz to 11.8 GHz.

Yi-Jen Chan | Feng-Tso Chien | Chin-Wei Kuo | Shih-Cheng Yang

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