SiC-based FET for detection of NOx and O2 using InSnOx as a gate material

Abstract We have fabricated depletion-mode 4H–SiC field effect transistors (FETs) for use as gas sensors. To enable sensitivity to NO x and O 2 gases, a mixture of indium oxide (InO x ) and tin oxide (SnO x ) was deposited by rf magnetron reactive sputtering as a gate material. The chemical composition of the deposited film was examined using Auger electron spectroscopy (AES) combined with depth profiling analysis. The response to NO x and O 2 gases was investigated as a function of operating temperature for different concentrations of the test gas. The maximal response to NO x and O 2 was observed at 350 and 400 °C, respectively.

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