Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system

Spatially indirect electron-hole exciton condensates stabilized by interlayer Fock exchange interactions have been predicted in systems containing a pair of two-dimensional semiconductor or semimetal layers separated by a thin tunnel dielectric. The layer degree of freedom in these systems can be described as a pseudospin. Condensation is then analogous to ferromagnetism, and the interplay between collective and quasiparticle contributions to transport is analogous to phenomena that are heavily studied in spintronics. These phenomena are the basis for pseudospintronic device proposals based on possible low-voltage switching between high (nearly shorted) and low interlayer conductance states and on near perfect Coulomb drag-counterflow current along the layers. In this work, a quantum transport simulator incorporating a non-local Fock exchange interaction is presented, and used to model the essential transport physics in the bilayer graphene system. Finite size effects, Coulomb drag-counterflow current, critical interlayer currents beyond which interlayer DC conductance collapses at sub-thermal voltages, non-local coupling between interlayer critical currents in multiple lead devices, and an Andreev-like reflection process are illustrated.

[1]  L. Register,et al.  Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence , 2010 .

[2]  A. H. MacDonald,et al.  Bose–Einstein condensation of excitons in bilayer electron systems , 2004, Nature.

[3]  A. Yacoby,et al.  Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene , 2010, Science.

[4]  Dharmendar Reddy,et al.  Bilayer pseudospin field effect transistor , 2015 .

[5]  Dharmendar Reddy,et al.  Bilayer Pseudo-Spin Field Effect Transistor (BiSFET): Concepts and Critical Issues for Realization , 2012 .

[6]  A. Geim,et al.  Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.

[7]  Feng Wu,et al.  Theory of Two-Dimensional Spatially Indirect Equilibrium Exciton Condensates , 2015, 1506.01947.

[8]  E. Tutuc,et al.  Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device , 2009, IEEE Electron Device Letters.

[9]  I. Sodemann,et al.  Interaction-enhanced coherence between two-dimensional Dirac layers , 2012, 1203.3594.

[10]  S. Datta Electronic transport in mesoscopic systems , 1995 .

[11]  L. Register,et al.  Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model , 2013, International Conference on Simulation of Semiconductor Processes and Devices.

[12]  A. MacDonald,et al.  How to make a bilayer exciton condensate flow , 2008, 0801.3694.

[13]  Charlotte Froese Fischer,et al.  The Hartree-Fock method for atoms: A numerical approach , 1977 .

[14]  K. West,et al.  Resonantly enhanced tunneling in a double layer quantum hall ferromagnet. , 2000, Physical review letters.

[15]  E Tutuc,et al.  Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing. , 2004, Physical review letters.

[16]  L. Register,et al.  Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers , 2011 .

[17]  I. Sodemann,et al.  Nonlocal transport mediated by spin supercurrents , 2014, 1408.1100.

[18]  L. Register,et al.  Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET) , 2013, 2013 IEEE International Electron Devices Meeting.

[19]  H. Min,et al.  Room-temperature superfluidity in graphene bilayers , 2008, 0802.3462.

[20]  W. Dietsche,et al.  Critical tunneling currents in the regime of bilayer excitons , 2008, 0803.2794.

[21]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[22]  K. West,et al.  Exciton condensation and perfect Coulomb drag , 2012, Nature.

[23]  Kwok K. Ng,et al.  Complete guide to semiconductor devices , 1995 .