Design and Analysis of 1MHz Class-E Power Amplifier

This paper presents the simulation and experimental of Class-E power amplifier which consists of a load network and a single transistor that is operated as a switch at the carrier frequency of the output signal. Class-E power amplifier is often used in designing a high frequency ac power source because its ability to perform the conversion efficiently even when working at high frequencies with significant reduction in switching losses. In this paper, a 10W Class-E power amplifier is designed, constructed, and tested in the laboratory with operating frequency of 1 MHz. To be specific, SK40C microcontroller board with PIC16F877A is used to generate a pulse width modulation (PWM) switching signal to drive the IRF510 MOSFET. This paper focuses on studying the effect of switching and performance analysis of the Class-E power amplifier behavior at 1MHz frequency. The performance parameter relationship of Class-E power amplifier were observed and analyzed. The theoretical calculations, simulation and experimental results at optimum operation using selected component values are compared and presented. The final result shows an output power is 9.45W with a drain efficiency of 98.44%. It is also shown that both simulation and experimental agree well with theoretical predictions. Key-Words:Class-E power amplifier, zero voltage switching, high frequency power amplifier

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