A pulsed nanosecond IR laser diode system to automatically test the Single Event Effects in the laboratory

A pulsed nanosecond IR laser diode system to automatically test the Single Event Effects in laboratory is described. The results of Single Event Latchup (SEL) test on two VLSI chips (VA HDR64, 0.8 and 1:2 mm technology) are discussed and compared to those obtained with high-energy heavy ions at GSI (Darmstadt). r 2002 Elsevier Science B.V. All rights reserved.