Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles

The aim of this work is to develop and investigate bare Si chips assembly to Au plated substrates. In this research thermal interface material paste based on mixture of micro-Ag particles and pressureless sintering at 175 °C was studied. Joints obtained in the experiments had adhesion of 10 MPa and thermal resistance as low as 0.25 K/W. Novelty of this work is application of micro-Ag paste at low temperature process and without pressure applied on the chip. Those parameters are usually shown as limitation of Ag paste applications. Additionally, after ageing for 500 h at 125°C and thermal cycles (-20°C ÷ 100°C) investigated joints maintained their mechanical and thermal properties.

[1]  Rommel Obed,et al.  Effect Of Nickel, Silver And Gold Wafer Backside Metallizations (BSM) On 80Au20Sn (Gold-Tin) Die Attach , 2021, 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).

[2]  G. Lu,et al.  Pressureless Sintered-Silver Die-Attach at 180 °C for Power Electronics Packaging , 2021, IEEE Transactions on Power Electronics.

[3]  Ruud de Wit.  Silver Sintering Die Attach Developments for RF, Power and Automotive Applications , 2021, 2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC).

[4]  K. S. Siow,et al.  Comparing the mechanical and thermal-electrical properties of sintered copper (Cu) and sintered silver (Ag) joints , 2021 .

[5]  M. Hsieh,et al.  Pressureless and low temperature direct bonding on Si, SiC and GaN via Ag paste sinter-joining , 2021, 2021 International Conference on Electronics Packaging (ICEP).

[6]  P. Śpiewak,et al.  Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications , 2021, 2021 44th International Spring Seminar on Electronics Technology (ISSE).

[7]  K. Suganuma,et al.  Online Thermal Resistance and Reliability Characteristic Monitoring of Power Modules With Ag Sinter Joining and Pb, Pb-Free Solders During Power Cycling Test by SiC TEG Chip , 2021, IEEE Transactions on Power Electronics.

[8]  Marty Lorgino D. Pulutan,et al.  Thermomechanical Stress and Strain Distribution and Thermal Resistivity Correlation to Bondline Thickness of Ag Sinter , 2020, 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).

[9]  N. Lee,et al.  Highly Reliable Die-Attach Silver Joint with Pressure-Less Sintering Process , 2019, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC).

[10]  A. Larsson,et al.  Solid-Liquid InterDiffusion (SLID) Bonding, for Thermally Challenging Applications , 2019, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC).

[11]  M. Myśliwiec,et al.  Applying Sintering and SLID Bonding for Assembly of GaN Chips Working at High Temperatures , 2018, 2018 7th Electronic System-Integration Technology Conference (ESTC).

[12]  K. Suganuma,et al.  Sintering mechanism of micron/submicron-size silver particles , 2018, 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC).

[13]  Xu Yang,et al.  Review of state-of-the-art integration technologies in power electronic systems , 2017 .

[14]  Wenzhong Zhao,et al.  Overview of the assembly and packaging of wide band gap semiconductor technologies , 2017, 2017 18th International Conference on Electronic Packaging Technology (ICEPT).

[15]  L. Mendizabal,et al.  Survey of High-Temperature Reliability of Power Electronics Packaging Components , 2015, IEEE Transactions on Power Electronics.