Optical bistability on reflection with an InSb étalon controlled by a guided wave.

We report experimental results on optical bistability using an InSb étalon gold coated on one face, at 80 K and 5.59-microm wavelength. The bistability, observed on reflection, was controlled by a beam coupled through the edge of the étalon. The geometry lends itself to the possibility of addressing a large number of individual spots, all of which are controlled by the same guided beam.

[1]  Eitan Abraham,et al.  Optical bistability and related devices , 1982 .

[2]  Nasser N Peyghambarian,et al.  Observation of Biexcitonic Optical Bistability and Optical Limiting in CuCl , 1983 .

[3]  David A. B. Miller,et al.  Two beam optical signal amplification and bistability in InSb , 1979 .

[4]  D. Miller,et al.  Refractive Fabry-Perot bistability with linear absorption: Theory of operation and cavity optimization , 1981 .

[5]  Frank A. P. Tooley,et al.  High gain signal amplification in an InSb transphasor at 77 K , 1983 .

[6]  David A. B. Miller,et al.  Optical bistability and signal amplification in a semiconductor crystal: applications of new low‐power nonlinear effects in InSb , 1979 .

[7]  D. Sarid,et al.  Tunable nonlinear directional coupler , 1982 .

[8]  Ajoy K. Kar,et al.  Optical bistability in InSb at room temperature with two‐photon excitation , 1983 .

[9]  D. Sarid.  Analysis of bistability in a ring-channel waveguide. , 1981, Optics letters.

[10]  D. Miller,et al.  Dynamic non-linear optical processes in semiconductors , 1981 .

[11]  Nasser N Peyghambarian,et al.  Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon , 1984 .

[12]  Mohammad R. Taghizadeh,et al.  Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times , 1983 .

[13]  C. T. Seaton,et al.  Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors , 1981 .