Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm
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Kenneth Wu | J. R. Shih | J. Shih | K. Pey | C. Tung | R. Ranjan | Kenneth Wu | V. L. Lo | R. Ranjan | C. H. Tung | K. L. Pey | V. Lo
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