Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm

The saturation of a critical gate voltage at 2–2.4 V for SiON with thickness ≪ 1.6 nm (EOT ≪ 1.4 nm) extends the role of digital breakdown (BD) in prolonging progressive BD at nominal voltages. As a result, the post-BD gate leakage degradation rate, which is extrapolated from a high voltage using the conventional approach, is highly overestimated, warranting one to revise the post-BD reliability assessment.

[1]  C.H. Tung,et al.  Multiple Digital Breakdowns and Its Consequence on Ultrathin Gate Dielectrics Reliability Prediction , 2007, 2007 IEEE International Electron Devices Meeting.

[2]  K. Pey,et al.  Significance of Breakdown Location on Post-Breakdown Transient and MOSFET Degradation , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[3]  K. Pey,et al.  A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[4]  J.S. Suehle,et al.  Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[5]  Barry P. Linder,et al.  Growth and scaling of oxide conduction after breakdown , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[6]  B P Linder,et al.  Breakdown transients in ultrathin gate oxides: transition in the degradation rate. , 2003, Physical review letters.

[7]  G. Ghibaudo,et al.  A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).