Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors

The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.