An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells
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High‐efficiency p‐Ga1−xAlxAs, p‐GaAs, n‐GaAs solar cells are made by isothermally soaking n‐GaAs substrates in an undersaturated Zn‐doped Ga‐Al‐As melt. This one‐step growth procedure produces a graded band gap p‐Ga1−xAlxAs layer 0.2–0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
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