Observation of highly nondegenerate four-wave mixing in 1.5 mu m traveling-wave semiconductor optical amplifiers and estimation of nonlinear gain coefficient

Nondegenerate four-wave mixing is measured in the 1.5 mu m traveling-wave semiconductor optical amplifier medium as a function of the pump-probe detuning frequency ranging from a few GHz to 400 GHz. It is found that two different sources are responsible for the four-wave mixing: the carrier density modulation and the nonlinear gain effect. The latter is clearly observed when the detuning frequency increases above 100 GHz. The nonlinear gain coefficient epsilon , which induces a gain grating through the pump-probe beating, is estimated to be 1.75*10/sup -23/ m/sup 3/. The change in the real refractive index associated with the nonlinear gain effect, which generates an index grating, is negligibly small. The relaxation time involved in the nonlinear gain effect is found to be less than 0.3 ps. These results support the role of the spectral hole burning rather than the carrier heating in the nonlinear gain effect. >

[1]  C. Su,et al.  Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing‐wave‐induced nonlinear gain theory in 1.3 μm wavelength semiconductor diode lasers , 1989 .

[2]  Govind P. Agrawal,et al.  Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasers , 1987 .

[3]  Dielectric grating induced by cavity standing wave as a new explanation of origin of nonlinear gain in semiconductor diode lasers , 1988 .

[4]  Erich P. Ippen,et al.  Subpicosecond gain dynamics in GaAlAs laser diodes , 1987 .

[5]  Gadi Eisenstein,et al.  Femtosecond gain dynamics in InGaAsP optical amplifiers , 1990 .

[6]  Measurement of the gain saturation spectrum in InGaAsP diode lasers , 1990 .

[7]  Masahiro Asada,et al.  Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers , 1985 .

[8]  Minoru Yamada,et al.  Theoretical analysis of nonlinear optical phenomena taking into account the beating vibration of the electron density in semiconductor lasers , 1989 .

[9]  Rodney S. Tucker,et al.  High-speed modulation of semiconductor lasers , 1985 .

[10]  John E. Bowers,et al.  High speed semiconductor laser design and performance , 1987 .

[11]  F. Favre,et al.  Four-wave mixing in traveling-wave semiconductor laser amplifiers , 1990 .

[12]  Govind P. Agrawal,et al.  Population pulsations and nondegenerate four-wave mixing in semiconductor lasers and amplifiers , 1988 .

[13]  W. Elsasser,et al.  Four-wave mixing in GaAs/AlGaAs semiconductor lasers , 1989 .

[14]  C. Henry Theory of the linewidth of semiconductor lasers , 1982 .

[15]  Robert Frey,et al.  Intracavity nearly degenerate four‐wave mixing in a (GaAl)As semiconductor laser , 1985 .

[16]  W. Joyce,et al.  Analytic approximations for the Fermi energy of an ideal Fermi gas , 1977 .

[17]  C. Caneau,et al.  1.5 mu m GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiers , 1990, IEEE Photonics Technology Letters.

[18]  E. Ippen,et al.  Subpicosecond spectral gain dynamics in AlGaAs laser diodes , 1988 .

[19]  G P Agrawal,et al.  Four-wave mixing and phase conjugation in semiconductor laser media. , 1987, Optics letters.

[20]  Govind P. Agrawal,et al.  Modulation bandwidth of high‐power single‐mode semiconductor lasers: Effect of intraband gain saturation , 1990 .

[21]  Takaaki Mukai,et al.  Detuning characteristics and conversion efficiency of nearly degenerate four-wave mixing in a 1.5- mu m traveling-wave semiconductor laser amplifier , 1990 .

[22]  W. Rideout,et al.  Determination of the gain nonlinearity time constant in 1.3 μm semiconductor lasers , 1991 .