Advanced Numerical Modelling of Non-Volatile Memory Cells

The fl oating gate voltage of a non-volatile memory cell cannot be accessed directly from measurements but can be simulated us­ ing numerical techniques. This allows nu­ merical simulations to provide a benchmark for coupling ratio measurement methodolo­ gies. Various coupling ratio methodologies from literature are examined and gfJ,idelines to improving the application of these meth­ ods to non-volatile memory cells are out­ lined. The dependence of the coupling ra­ tios on applied terminal voltages is inves­ tigated. In addition, the effect of floating gate polysilicon doping on device perfor­ mance is estimated using numerical simu­ lation techniques. This work demonstrates the role of advanced numerical simulation in supplementing the electrical characteri­ sation of non-volatile memory cells.