Multiple potential barriers as a possible mechanism to increase the Seebeck coefficient and electrical power factor

In this paper, a possible mechanism to increase the Seebeck coefficient of semiconductors is proposed. Multiple potential barriers are used to reduce the mean‐free‐path of carriers at the cold end without significantly affecting those at the hot end. This results in an increase in the Seebeck coefficient. Theoretical calculation based upon a simplified model indicates that an increase in the electrical power factor may also be obtained when the height of multiple potential barrier is optimized at an order of magnitude of kT. Furthermore, it is expected that if an asymmetrical distribution of potential barriers exists along the temperature gradient, a directional dependence of the Seebeck coefficient on the temperature gradient may be observed.