Raman shifts in MBE‐grown Si x Ge 1 − x − y Sn y alloys with large Si content
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G. Capellini | M. Oehme | J. Schulze | C. Manganelli | Davide Spirito | S. Chiussi | J. Schlipf | I. Fischer | C. Clausen | Ahmed Elsayed | C. Koch | Michael R. S. Huang | Henriette Tetzner