Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Abstract In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2–3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

[1]  F. Krummenacher,et al.  Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs , 2007, IEEE Transactions on Electron Devices.

[2]  Jyh-Chyurn Guo,et al.  Pocket implantation effect on drain current flicker noise in analog nMOSFET devices , 2004 .

[3]  K. Benaissa,et al.  New cost-effective integration schemes enabling analog and high-voltage design in advanced CMOS SOC technologies , 2010, 2010 Symposium on VLSI Technology.

[4]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[5]  A.S. Roy,et al.  Noise modeling methodologies in the presence of mobility degradation and their equivalence , 2006, IEEE Transactions on Electron Devices.

[6]  A.S. Roy,et al.  Noise Modeling in Lateral Nonuniform MOSFET , 2007, IEEE Transactions on Electron Devices.

[7]  Carlo Samori,et al.  Flicker Noise Up-Conversion due to Harmonic Distortion in Van der Pol CMOS Oscillators , 2012, IEEE Transactions on Circuits and Systems I: Regular Papers.

[8]  A. Visconti,et al.  Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices , 2007, IEEE Electron Device Letters.

[9]  Chih-Yuan Lu,et al.  Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory , 2006, 2006 International Electron Devices Meeting.

[10]  C. Hu,et al.  Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations , 2011, 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.

[11]  F. Krummenacher,et al.  Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs , 2006, 2006 International Electron Devices Meeting.

[12]  Charles G. Sodini,et al.  A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon , 1989 .

[13]  A.S. Roy,et al.  Noise Modeling in Lateral Asymmetric MOSFET , 2006, 2006 International Electron Devices Meeting.

[14]  Hyuck-In Kwon,et al.  Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings , 2010, IEEE Electron Device Letters.

[15]  Y. Chauhan,et al.  Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

[16]  D. Frank,et al.  Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm , 2006, 2009 Symposium on VLSI Technology.

[17]  F. Hooge.  1/ƒ noise is no surface effect , 1969 .

[18]  C. Hu,et al.  Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs , 2015, IEEE Journal of the Electron Devices Society.

[19]  Ping-Keung Ko,et al.  A physics-based MOSFET noise model for circuit simulators , 1990 .

[20]  Xin Zhang,et al.  Flicker noise in advanced CMOS technology: Effects of halo implant , 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[21]  Shaikh Ahmed,et al.  Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface , 2006 .

[22]  A.J. Scholten,et al.  Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices , 2005, IEEE Transactions on Electron Devices.

[23]  R.P. Jindal,et al.  Compact Noise Models for MOSFETs , 2006, IEEE Transactions on Electron Devices.

[24]  M. Yamaoka,et al.  Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM , 2008, 2008 IEEE International Reliability Physics Symposium.