High-speed response characteristics of GaAs optoelectronic integrated receivers
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The letter focuses on the measurement of pulse response characteristics of an optoelectronic integrated receiver in which a GaAs metal-semiconductor-metal (MSM) photodiode and a GaAs field-effect transistor amplifier are monolithically integrated on a GaAs substrate. The maximum parasitic capacitance was found to be negligible for the total capacitance at the amplifier input. We also verified a fast response of this receiver showing a rise time of 300 ps.