Wet etching of GaN grown by molecular beam epitaxy on Si(111)
暂无分享,去创建一个
T. Palacios | E. Monroy | F. Calle | M. Varela | F. Naranjo | M. Sánchez-García | E. Calleja | E. Muñoz | C. Ballesteros
[1] E. Monroy,et al. High visible rejection AlGaN photodetectors on Si(111) substrates , 2000 .
[2] Lester F. Eastman,et al. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire , 2000 .
[3] O. Ambacher,et al. High electron mobility AlGaN/GaN heterostructure on (111) Si , 2000 .
[4] Yasumasa Suzuki,et al. Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Using Coaxial Impact Collision Ion Scattering Spectroscopy , 2000 .
[5] Robert F. Karlicek,et al. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy , 1999 .
[6] R. J. Shul,et al. GAN : PROCESSING, DEFECTS, AND DEVICES , 1999 .
[7] R. Cheung,et al. Reactive ion etch-induced effects on the near-band-edge luminescence in GaN , 1999 .
[8] F. Calle,et al. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy: Doping, optical, and electrical properties , 1999 .
[9] S. Pearton,et al. UV-photoassisted etching of GaN in KOH , 1999 .
[10] Joan M. Redwing,et al. CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN , 1998 .
[11] C. Y. Chen,et al. Deep ultraviolet enhanced wet chemical etching of gallium nitride , 1998 .
[12] Supratik Guha,et al. Ultraviolet and violet GaN light emitting diodes on silicon , 1998 .
[13] M. Seelmann-Eggebert,et al. Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire , 1997 .
[14] E. Monroy,et al. GROWTH KINETICS AND MORPHOLOGY OF HIGH QUALITY ALN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY , 1997 .
[15] R. Beresford,et al. Exciton and donor - acceptor recombination in undoped GaN on Si(111) , 1997 .
[16] E. Hu,et al. Room‐temperature photoenhanced wet etching of GaN , 1996 .
[17] Hadis Morkoç,et al. Emerging gallium nitride based devices , 1995, Proc. IEEE.
[18] Akira Yoshida,et al. Chemical Etching of Indium Nitride , 1992 .
[19] D. Medlin,et al. On the initial stages of AlN thin-film growth onto (0001) oriented Al2O3 substrates by molecular beam epitaxy , 1999 .
[20] Eric Sven Hellman,et al. The Polarity of GaN: a Critical Review , 1998 .
[21] E. Monroy,et al. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy , 1997 .