论文信息 - First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate

First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate

We report the first successful room‐temperature cw operations of a Ga0.25 In0.75 As0.5 P0.5 ‐InP buried ridge structure laser emitting at 1.3 μm grown by two‐step low‐pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).

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