Integration of SPAD in 28nm FDSOI CMOS technology
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Patrick Pittet | Andreia Cathelin | Francis Calmon | Dominique Golanski | D. Rideau | T. Chaves de Albuquerque | Raphael Clerc | Y. Benhammou | S. Jouan | S. Jouan | Y. Benhammou | D. Rideau | D. Golanski | A. Cathelin | T. C. D. Albuquerque | F. Calmon | R. Clerc | P. Pittet
[1] A. Schenk. Rigorous theory and simplified model of the band-to-band tunneling in silicon , 1993 .
[2] G. Groos,et al. Experimental extraction of the electron impact-ionization coefficient at large operating temperatures , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[3] David Stoppa,et al. Avalanche Photodiodes in Submicron CMOS Technologies for High-Sensitivity Imaging , 2011 .
[4] L. Grant,et al. A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology , 2012, IEEE Electron Device Letters.
[5] Gerald S. Buller,et al. Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm , 2013, IEEE Transactions on Electron Devices.
[6] E. Charbon,et al. SPAD-based Sensors , 2013 .
[7] E. Charbon. Single-photon imaging in complementary metal oxide semiconductor processes , 2014, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences.
[8] S. Pellegrini,et al. Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[9] S. Pellegrini,et al. Industrialised SPAD in 40 nm technology , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).
[10] Edoardo Charbon,et al. A High-PDE, Backside-Illuminated SPAD in 65/40-nm 3D IC CMOS Pixel With Cascoded Passive Quenching and Active Recharge , 2017, IEEE Electron Device Letters.
[11] E. Charbon,et al. A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).
[12] A. Savoy-Navarro,et al. Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology , 2017 .
[13] Edoardo Charbon,et al. A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression , 2018, 2018 IEEE International Solid - State Circuits Conference - (ISSCC).