Deposition of metastable binary alloy thin films using sequential ion beams from a single ion source
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M. Brett | K. Stromsmoe | R. Lawson | J. Ahn | K. M. Yoo
[1] K. Stromsmoe,et al. Microprocessor‐controlled electron impact ion source operated at constant discharge current and voltage , 1986 .
[2] G. E. Thomas,et al. Ion beam epiplantation , 1982 .
[3] P. Sigmund,et al. Distortion of depth profiles during ion bombardment II. Mixing mechanisms , 1981 .
[4] T. Takagi,et al. Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devices☆ , 1977 .
[5] J. Amano,et al. Thin‐film deposition using low‐energy ion beams (2) Bb+ ion‐beam deposition and analysis of deposits , 1977 .
[6] J. Sites,et al. Oxide barriers on GaAs by neutralized ion beam sputtering. Technical report , 1977 .
[7] J. Amano,et al. Thin film deposition using low-energy ion beams. I. System specification and design , 1976 .
[8] G. E. Thomas,et al. Ion cluster beam deposition of silver and germanium on silicon , 1981 .
[9] J. Greene,et al. Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex films , 1981 .
[10] P. Sigmund,et al. Distortion of depth profiles during sputtering: I. General description of collisional mixing , 1980 .
[11] S. Myers. Properties and applications of ion‐implanted alloys , 1980 .
[12] R. Collins. Preferential sputtering of binary alloys with diffusion: The equilibrium distribution , 1978 .
[13] S. Ingrey,et al. Fabrication of optical waveguides by ion-beam sputtering , 1976 .
[14] P. Sigmund. ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS , 1969 .