CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe∕ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

[1]  M. Tamargo,et al.  Molecular beam epitaxial growth and characterization of zinc-blende ZnMgSe on InP (001) , 2004 .

[2]  N. Ledentsov,et al.  Devices Based on Epitaxial Nanostructures , 2004 .

[3]  Nikolai N. Ledentsov,et al.  Epitaxy of Nanostructures , 2003 .

[4]  Arezky H. Rodríguez,et al.  Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy , 2003 .

[5]  M. Tamargo,et al.  Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy , 2003 .

[6]  J. Brault,et al.  Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization , 2002 .

[7]  M. Tamargo.  II-VI Semiconductor Materials and their Applications , 2002 .

[8]  C. Chi,et al.  Effects of Be on the II–VI/GaAs interface and on CdSe quantum dot formation , 2001 .

[9]  V. S. Bagaev,et al.  Photoluminescence of various Zn1-xCdxTe/ZnTe heterostructures grown by MBE on GaAs(001) and ZnTe(001) substrates : temperature dependences , 2000 .

[10]  M. Tamargo,et al.  Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates , 2000 .

[11]  T. Yasuda,et al.  Self-assembled formation of ZnCdSe quantum dots on atomically smooth ZnSe surfaces on GaAs(001) by molecular beam epitaxy , 1999 .

[12]  I. Suemune,et al.  GROWTH AND LUMINESCENCE PROPERTIES OF SELF-ORGANIZED ZNSE QUANTUM DOTS , 1999 .

[13]  Z. Alferov,et al.  CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers , 1999 .

[14]  J. Bergman,et al.  GROWTH AND EXCITONIC PROPERTIES OF SINGLE FRACTIONAL MONOLAYER CDSE/ZNSE STRUCTURES , 1998 .

[15]  A. R. Kovsh,et al.  Effect of matrix on InAs self-organized quantum dots on InP substrate , 1998 .

[16]  I. Krestnikov,et al.  Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix , 1998 .

[17]  James L. Merz,et al.  Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy , 1996 .

[18]  Shi,et al.  Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots. , 1996, Physical review. B, Condensed matter.

[19]  Gerhard Abstreiter,et al.  Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100) , 1995 .

[20]  N. Ledentsov,et al.  RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS , 1995 .

[21]  M. Bawendi,et al.  Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites , 1993 .

[22]  L. Goldstein,et al.  Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices , 1985 .