Low energy ion assisted deposition of Ta/Cu films

A combination of molecular dynamics simulations and experiments has been used to investigate the use of various low energy ion assisted vapor deposition approaches for controlling the interfacial structures of a model copper∕tantalum multilayer system. Films were grown using argon ion beam assistance with either a fixed or modulated ion energy during metal deposition. The effect of sequential ion assistance (after layer’s deposition) was also investigated. The argon ion energy was varied between 0 and 50eV and the effect on the atomic scale structure of Ta∕Cu film interfaces and the film electrical resistivity were studied. The use of simultaneous argon ion assistance with an ion energy of ∼10eV and an ion∕metal atom flux ratio of ∼6 resulted in atomically sharp interfaces with little intermixing, consistent with simulation predictions. Ion impacts in this range activated surface atom jumping and promoted a step flow film growth mode. Higher energies were also successful at interface flattening, but they ...

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