Preparation of BaTiO3 Films by RF Sputtering and Their Crystallographic, Dielectric and Optical Properties

BaTiO3 films having a perovskite structure were fabricated onto a platinum and a fused-quartz substrates by RF planar-magnetron sputtering at a substrate temperature above 500°C. However, to obtain a ferroelectric film, it is necessary to anneal at about 1000°C in an atmosphere of oxygen. One of ferroelectric films obtained had a relative dielectric constant of 1680, a remanent polarization of 0.8 µC/cm2 and a coercive field of 3 kV/cm at room temperature.