Understanding the doping effects on the structural and electrical properties of ultrathin carbon nanotube networks

Similar to other semiconductor technology, doping of carbon nanotube (CNT) thin film is of great significance for performance improvement or modification. However, it still remains a challenge to seek a stable and effective dopant. In this paper, we unitize several spectroscopic techniques and electrical characterizations under various conditions to investigate the effects of typical dopants and related methods. Nitric acid (HNO3) solution, I2 vapor, and CuI nanoparticles are used to modify a series of ultrathin CNT networks. Although efficient charge transfer is achieved initially after doping, HNO3 is not applicable because it suffers from severe reliability problems in structural and electrical properties, and it also causes a number of undesired structural defects. I2 vapor doping at 150 °C can form some stable C-I bonding structures, resulting in relatively more stable but less efficient electrical performances. CuI nanoparticles seem to be an ideal dopant. Photonic curing enables the manipulation of...

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