论文信息 - Three-dimensional simulation of ion implantation

Three-dimensional simulation of ion implantation

With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason, within the project PROMPT a multidimensional process simulation software capable to provide appropriate input to three-dimensional device simulation has been developed by a European consortium. The PROMPT software compiles the geometry and the dopant profiles of the device from the results of existing one- and two-dimensional process simulators and three-dimensional modules newly developed. Within this presentation, the capabilities of the three-dimensional ion implantation module developed at FhG-IIS-B within PROMPT are being outlined.

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